smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 features high voltage transistors pb-free packages are available electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v cbo i c = -100 a, i e =0 -160 v collector-emitter breakdown voltage * v ceo i c =- 1.0 ma, i b = 0 -150 v emitter-base breakdown voltage v ebo i e =-10 a, i c =0 -5 v collector cutoff current i cbo v cb =- 120 v, i e =0 -0.1 a emitter cutoff current i ebo v eb =-4.0v,i c =0 -0.1 a i c =-1.0ma,v ce =-5v 80 i c =-10ma,v ce = -5 v 100 300 i c =-50ma,v ce =-5v 50 collector-emitter saturation voltage * v ce(sat) i c =-50ma,i b = -5.0 ma -0.5 v base-emitter saturation voltage * v be(sat) i c =-50ma,i b = -5.0 ma -1.0 v transiston frequency f t v ce =-5v,i c =-10ma,f=30mhz 100 mhz * pulse test: pulse width = 300 s, duty cycle=2.0%. h fe dc current gain * marking marking 2l absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -160 v collector-emitter voltage v ceo -150 v emitter-base voltage v ebo -5 v collector current-continuous i c -0.6 a collector power dissipation pc 300 mw junction and storage temperature t j ,t stg -55 to +150 sales@twtysemi.com 1 of 2 http://www.twtysemi.com transistors smd type kmbt5401 (MMBT5401) s m d ty p e t r a n s i s t o r smd t ype t product specification 4008-318-123
transistors typical characteristics smd type fig.1 max power dissipation vs. ambient temperature fig.2 collector emitter saturation voltage vs.collector current fig.3 dc current gain vs. collector current fig.4 base emitter voltage vs.collector current fig.5 gain bandwidth product vs. collector current kmbt5401 (MMBT5401) sales@twtysemi.com 2 of 2 http://www.twtysemi.com s m d ty p e t r a n s i s t o r smd t ype t product specification 4008-318-123
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